作者: John F. Seely , Craig N. Boyer , Glenn E. Holland , James L. Weaver
DOI: 10.1364/AO.41.005209
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摘要: The time-dependent response of a 1-mm2 silicon photodiode was characterized by use pulsed synchrotron radiation in the 4- to 16-nm-wavelength range. Modeling input pulse and electrical allowed photodiode’s capacitance as function wavelength applied bias voltage be determined. 7- 19-pF range resulted fall times small 0.4 ns. determined x-ray illumination good agreement with optical laser illumination. absolute responsivity measured comparison calibrated photodiode.