HIGH PRESSURE ELECTRICAL RESISTIVITY STUDY ON NONLINEAR SINGLE CRYSTAL ZINC THIOUREA CHLORIDE

作者: S. ARIPONNAMMAL , R. SELVA VENNILA , S. RADHIKA , P. M. USHASREE

DOI: 10.1142/S0217984907012918

关键词:

摘要: Zinc thiourea chloride (ZTC) crystals were crystallized by slow evaporation technique. The lattice parameters of the grown determined angle dispersive X-ray powder diffraction technique (XRD) and structure was confirmed. High pressure electrical resistivity study carried out on this crystal results are reported here.

参考文章(8)
P. A. Angeli Mary, S. Dhanuskodi, Growth and characterization of a new nonlinear optical crystal : bis thiourea zinc chloride Crystal Research and Technology. ,vol. 36, pp. 1231- 1237 ,(2001) , 10.1002/1521-4079(200111)36:11<1231::AID-CRAT1231>3.0.CO;2-I
S. Ariponnammal, C. Venkateswaran, S. Natarajan, High pressure electrical resistivity study on cubic SnTe1−xSex Physica Status Solidi B-basic Solid State Physics. ,vol. 197, ,(1996) , 10.1002/PSSB.2221970136
S. Ariponnammal, S. Radhika, R. Selva Vennila, N. Victor Jeya, High pressure electrical resistivity study on nonlinear single crystal zinc thiourea sulphate (ZTS) Crystal Research and Technology. ,vol. 40, pp. 786- 788 ,(2005) , 10.1002/CRAT.200410432
J. A. Kafalas, A. N. Mariano, High-Pressure Phase Transition in Tin Telluride. Science. ,vol. 143, pp. 952- 952 ,(1964) , 10.1126/SCIENCE.143.3609.952
S. Ariponnammal, R. Selva Vennila, S. Radhika, S. Arumugam, High pressure electrical resistivity study on nonlinear bis thiourea cadmium chloride (BTCC) single crystal Crystal Research and Technology. ,vol. 40, pp. 896- 897 ,(2005) , 10.1002/CRAT.200410453
J. Ramajothi, S. Dhanuskodi, K. Nagarajan, Crystal growth, thermal, optical and microhardness studies of tris (thiourea) zinc sulphate - a semiorganic NLO material Crystal Research and Technology. ,vol. 39, pp. 414- 420 ,(2004) , 10.1002/CRAT.200310204
S. Dhanuskodi, K. Vasantha, Structural, thermal and optical characterizations of a NLO material: L-alaninium oxalate Crystal Research and Technology. ,vol. 39, pp. 259- 265 ,(2004) , 10.1002/CRAT.200310180