Doped hydrogenated amorphous silicon films by laser‐induced chemical vapor deposition
作者： H. M. Branz , S. Fan , J. H. Flint , B. T. Fiske , D. Adler
DOI: 10.1063/1.96933
关键词:
摘要: We report the growth and characterization of both n‐type p‐type doped hydrogenated amorphous silicon films prepared by laser‐induced chemical vapor deposition. For doping types, activation energy for electrical conduction has been reduced to below 0.2 eV controlled achieved. Phosphine lowers rate, while diborane essentially no effect on but enhances thermal growth. Diborane also decreases hydrogen concentration films, resulting in optical gaps.
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