作者: C. J. Rossouw , C. T. Forwood , M. A. Gibson , P. R. Miller
DOI: 10.1080/01418619608239691
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摘要: Abstract A new statistical method for atom location by channelling-enhanced micro-analysis is applied to γ [sbnd] α2 duplex Ti[sbnd]Al based alloys containing ternary element additions of V, Cr, Mn, Ga, Y, Zr, Nb, Mo, La, Hf, Ta and W at the 1 at.% level. Incoherent channelling patterns, formed variation in characteristic X-ray emission as a function or orientation, are collected from number different zone axes both phases. Comparisons experimental patterns with calculated maps various crystallographic sites indicate that atoms incorporated substitutionally atomic structure α2-phases do not occupy interstitial sites. The site distribution elements determined through χ2-minimization techniques, together quantitative error limits. non-stoichiometric α2-phase investigated convergent-beam electron diffraction.