Nanoscale Domain Dynamics in Ferroelectric Thin Films

作者: V. Nagarajan , R. Ramesh

DOI: 10.1007/978-1-4419-9044-0_4

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摘要: This paper reviews nanoscale phenomena in ferroelectric thin films. Specific focus is polarization relaxation dynamics and piezoelectric characterization model films nanostructures using voltage modulated scanning force microscopy coupled with nanofabrication techniques. We present results of studies on the time dependent remanent epitaxial PZT films, containing a uniform 2-dimensional grid 90° domains (c-axis plane film). Clear evidence role domain walls nucleation 180° reverse very local scale, pinning bowing shown. The kinetics modeled through stretched exponential approach. second part this illustrates how conventional AFM can be used as “nano” probe for properties. longitudinal constant (d33) capacitors (or islands) various compositions elucidated. show that by altering electromechanical interplay between substrate film, closer to morphotropic phase boundary, an unusual field dependence d33 exists. Due effect, change strain at saturation twice theoretical prediction, opening new applications such highly tunable devices. Secondly we discuss tetragonal Pb(Zr0.2Ti0.8)O3, movement elastic applied DC field, phenomenon hitherto observed only bulk single crystals or ceramics. ∼ 250 pm/V remanence, which approximately 3–4 times predicted value 87 crystal. summarize review some possible directions future work.

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