Ultrafast intersubband electron relaxation at /spl sim/1.55 /spl mu/m wavelength in GaN/AlGaN quantum well structures
作者： J.D. Heber , C. Gmachl , H.M. Ng , A.Y. Cho , S.-N.G. Chu
DOI: 10.1109/CLEO.2002.1034447
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摘要: Summary from only given. We report on the first comparative study of room temperature intersubband (IS) scattering lifetimes in a variety single and coupled double GaN/AlGaN MQW samples at different excitation powers wavelengths. Furthermore, with two types QW barriers are compared: bulk-like (85% AlN mole fraction) superlattice (SL) (65% fraction). All were grown by molecular beam epitaxy sapphire substrates.
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princeton.edu参考文章(2)
Norio Iizuka, Kei Kaneko, Nobuo Suzuki, Takashi Asano, Susumu Noda, Osamu Wada, Ultrafast intersubband relaxation (⩽150 fs) in AlGaN/GaN multiple quantum wells Applied Physics Letters. ,vol. 77, pp. 648- 650 ,(2000) , 10.1063/1.127073
Claire Gmachl, Hock M. Ng, S.-N. George Chu, Alfred Y. Cho, Intersubband absorption at λ∼1.55 μm in well- and modulation-doped GaN/AlGaN multiple quantum wells with superlattice barriers Applied Physics Letters. ,vol. 77, pp. 3722- 3724 ,(2000) , 10.1063/1.1332108