Gate electrode dopant activation method for semiconductor manufacturing including a laser anneal
作者： Mark Yam , Christopher Olsen , Shulin Wang , Khaled Z. Ahmed , Toi Yue Becky Leung
DOI:
关键词:
摘要: In one embodiment, the invention generally provides a method for annealing doped layer on substrate including depositing polycrystalline to gate oxide and implanting with dopant form layer. The further includes exposing rapid thermal anneal readily distribute throughout Subsequently, laser activate in an upper portion of
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