Recent Advances in the Study of the Fractional Quantum Hall Effect
作者： R. J. Nicholas , R. G. Clark , A. Usher , J. R. Mallett , A. M. Suckling
DOI: 10.1007/978-3-642-83114-0_23
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摘要: A description is given of the occurrence fractional quantum effects, and how these are influenced by presence disorder. It shown that, when electrons photoexcited into a GaAs-GaAIAs heterojunction, state existing at Landau level occupancy 7/5 can dominate over that 4/3. Activation energy measurements resistivity show gap states reduced new method analysis minima presented which used to give information on correlation length many-body ground state.
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