Fabrication of stabilized polysilicon resistors for SEU control
作者： Michael S. Liu , Jerry Yue , Gordon A. Shaw
DOI:
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摘要: A method for fabricating polysilicon resistors of intermediate high value use as cross-coupling or =ingle event upset (SEU) in memory cells. thin film is implanted with arsenic ions to produce a predetermined resistivity. The then fluorine stabilize the grain boundaries and thereby barrier height. Reducing variation height from run wafers allows fabrication reproducible SEU resistors.
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