Amorphous silicon produced by a new thermal chemical vapor deposition method using intermediate species SiF2
作者： Hideki Matsumura , Hiroyuki Tachibana
DOI: 10.1063/1.96000
关键词:
摘要: Amorphous silicon (a‐Si) films are deposited at about 320 °C by a new thermal chemical vapor deposition method. In this method, the gas mixture of intermediate species SiF2 and H2, decomposed thermally catalytic reaction, is used as material gas. It found that photosensitivity a‐Si film for AM1 100 mW/cm2 exceeds over 106 spin density low 1.5×1016 cm−3 with rate several A/s.
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