作者: N.M. Jokerst , M.A. Brooke , Sang-Yeon Cho , S. Wilkinson , M. Vrazel
DOI: 10.1109/JSTQE.2003.813307
关键词:
摘要: Emerging techniques for integrating optoelectronic (OE) devices, analog interface circuitry, RF and digital logic into ultra-mixed signal systems offers approaches toward demonstrations of integrated optical interconnections in electrical microsystems. As rising data rates dictate the use interfaces at increasingly smaller distances, stand a threshold opportunity pervasive implementation if cost-effective integration process technology performance can be implemented. Heterogeneous is one approach compound semiconductor OE Si CMOS circuits, organic materials. approaches, which utilize dissimilar materials independently grown optimized, are subsequently bonded together an system, particularly attractive methods creating high-performance This paper describes variety microsystems using thin film heterogeneous integration. Thin from standpoint that topography microsystem remain flat to within few microns, substrates often optically absorbing removed, both sides devices processed (e.g., contacted, coated), three-dimensionally stacked structures Demonstrations include InGaAs/Si receiver circuit operating 1 Gbps, InGaAs photodetector onto foundry microprocessor demonstrate single chip interconnected microprocessor, smart pixel emitter detector arrays resonant cavity enhanced P-i-N photodetectors on top per-pixel current controlled oscillators light emitting diodes converter gray-scale driver embedded waveguides interconnection chip-to-chip waveguide interconnections.