Backside-illuminated imaging sensor including backside passivation
作者： Vincent Venezia , Duli Mao , Hsin-Chih Tai , Howard E. Rhodes , Yin Qian
DOI:
关键词:
摘要: The disclosure describes embodiments of a process comprising forming pixel on frontside substrate, the substrate having frontside, backside, and thickness substantially equal to distance between backside. is reduced by removing material from backside allow for illumination pixel, treated with hydrogen plasma passivate also an apparatus semiconductor wafer formed wherein selected adjusted through wafer,
lens.org 参考文章(14)
Paul Kevin Shufflebotham, Method of polycrystalline silicon hydrogenation ,(1996)
Alex Hsu, Ching-Chun Wang, Tzu-Hsuan Hsu, Method to optimize substrate thickness for image sensor device ,(2011)
Hidetoshi Nozaki, Howard E. Rhodes, Backside illuminated imaging sensor with backside p+ doped layer ,(2008)
Chih-huei Wu, Tiemin Zhao, Xinping He, Surface passivation to reduce dark current in a CMOS image sensor ,(2001)
Alexander O. Goushcha, Richard A. Metzler, Ultra thin back-illuminated photodiode array fabrication methods ,(2005)
Byung-Jun Park, Unit pixels, image sensor containing unit pixels, and method of fabricating unit pixels ,(2008)
Shou-Gwo Wuu, Jen-Cheng Liu, Dun-Nian Yaung, Alignment for backside illumination sensor ,(2007)
Volker E. Lehmann, Ulrich M. Goesele, Method of producing a thin silicon on insulator layer by wafer bonding and chemical thinning ,(1990)
Manu J. Tejwani, Subramanian S. Iyer, Method of forming an ultra-uniform silicon-on-insulator layer ,(1993)