Balance equation approach to hot electron transport in many-valley semiconductors: Comparing with the Monte Carlo results for n-type Si

摘要: Abstract Most of the theoretical approachs to high field electron transport in many-valley semiconductors have been based either on Monte Carlo simulation or solving phenomenological Boltzmann equation relaxation time approximation. Although analytic balance method has applied various kind problems transport, its validity comparing with other methods not established. In this paper, taking same set parameters as those for n-type Si, we calculate drift velocity a function electric , and directions temperature range (T=8°K 300°K) from equations obtained by nonequilibrium statistical operator. We show that our results are excellent agreement wide field. also point out so called quantum correction hot is important present problem.