Influence of O/sub 2/ on rectification properties of nickel phthalocyanine thin film devices

作者: T.D. Anthopoulos , T.S. Shafai

DOI: 10.1109/EDMO.2000.919054

关键词:

摘要: Thin sandwich film structure devices of gold/nickel phthalocyanine/lead (Au/NiPc/Pb) were fabricated employing a novel in-situ method. Electrical measurements performed prior to, and after exposure the samples to dry air. Under forward bias for low applied voltages an ohmic conduction was evident, followed by SCLC in higher voltage range. In reverse bias, found exhibit weak rectifying properties originated mainly from bulk NiPe layer. After sample air five days strong effect at NiPc/Pb interface evident. The phenomenon is believed be associated with change NiPc work function as result O/sub 2/ adsorption on To verify this second type Au/NiPcO/sub 2//Pb fabricated. characterization showed stronger providing further experimental evidence influence organic Potential barrier height diode ideality factor both NiPc/Pb, NiPcO/sub interfaces air, also calculated.

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