Correlated Material Enhanced SRAMs With Robust Low Power Operation

摘要: We propose a novel static random access memory (SRAM) cell employing correlated material (CM) films in conjunction with the transistors to achieve higher read stability, write ability, and energy efficiency. The design of proposed SRAM utilizes orders magnitude difference resistance insulating metallic phases CM mitigate conflicts. By appropriately controlling phase transitions during operation through device–circuit codesign, we 30% noise margin 36% increase over standard SRAM. also leads 50% reduction leakage current due high state CM. This is achieved at 28% time penalty. discuss layout implications our technique present techniques sustain no area overhead.