Pattern-integrated interference lithography instrumentation.

摘要: Multi-beam interference (MBI) provides the ability to form a wide range of sub-micron periodic optical-intensity distributions with applications variety areas, including photonic crystals (PCs), nanoelectronics, biomedical structures, optical trapping, metamaterials, and numerous subwavelength structures. Recently, pattern-integrated lithography (PIIL) was presented as new lithographic method that integrates superposed pattern imaging in single-exposure step. In present work, basic design systematic implementation exposure system (PIIES) is realize PIIL by incorporating projection capability novel three-beam configuration. A fundamental optimization methodology model predict MBI-patterning performance. To demonstrate method, prototype PIIES experimental configuration presented, detailed alignment techniques procedures. Examples well-defined PC fabricated prototype, are potential for fabricating dense integrated circuits, well other