作者: D. Hulin , A. Mysyrowicz , L. L. Chase , A. Antonetti , J. Etchepare
DOI: 10.1007/978-3-642-82378-7_36
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摘要: It is well known that a strongly excited semiconductor crystal may become partly metallic, due to the formation in medium of dense plasma free electron-hole pairs. This phase represents lowest electronically state crystal, as long carriers density n exceeds critical value nc. If falls below nc, system reverts an insulating (excitonic) consisting correlated The complete understanding this Mott-like transition, particularly its dynamical aspect, great interest, both from fundamental point view for potential applications, e.g. fast switching devices.