Optimum bias of CMOS organic field effect transistor inverter through threshold adjustment of both p- and n-type devices
作者： BM Dhar , R Özgün , BJ Jung , HE Katz , AG Andreou
DOI: 10.1049/EL.2010.1603
关键词:
摘要: A hybrid fabrication technique is reported that relies on photolithography plus mechanical peel-off and enables, for the first time, patterning of positive negative charges spatially n- p-type organic field effect transistors, respectively, same wafer. Using proposed threshold adjusting technique, FET-based CMOS inverter has been fabricated employs adjustment both p- n-type transistors to bias them so maximum gain.
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