Heteroepitaxial ZnO nano hexagons on p-type SiC
作者： V. Khranovskyy , I. Tsiaoussis , G.R. Yazdi , L. Hultman , R. Yakimova
DOI: 10.1016/J.JCRYSGRO.2009.09.057
关键词:
摘要: ZnO single crystal nanohexagons have been grown heteroepitaxially on p-type Si-face 4H-SiC substrates with 8 degrees miscut from to [0 0 1] by catalyst-free atmospheric pressure metalorganic chemical vapor deposition and characterized x-ray diffraction, scanning transmission electron microscopy as well energy disperse cathodoluminescence analyses. The as-grown a pillar shape terminated c plane facets, are aligned along the growth direction epitaxial relation 1](ZnO) parallel to[0 1](4H-SiC) [1 (1) over bar 0](ZnO) to[1 0](4H-SiC). demonstrate intense UV emission (lambda(NBE)=376 nm) negligible defect-related luminescence.
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