Self organization of Ge dots on Si substrates : influence of misorientation

摘要: Abstract The growth of self organized fully strained Ge dots is accomplished by using a two step process which consists depositing on periodic unidirectional undulated Si 1− x (118) template layer. main reason for this methodology to make use the stress driven bunching that develops surface (10° off (001)). In report we concentrate mechanism RHEED and TEM measurements were used determine 2D–3D transition as function coverage. We find onset 3D island formation changes from 4 7 ML (001) surfaces, respectively. While islands are mainly isotropic they elongate along edge direction misoriented surfaces with reduction their lateral size in one direction. AFM presented show wire shaped top undulation improved homogeneity. correlation-length controlled content layer, example 20 nm large grown 0.6 0.4 (118). Low temperature photoluminescence spectra also described evolution features associated layer coverage between 1 6 ML. Dramatic found ML, dominant band seen shown be related formation. influence conditions PL results discussed.