Semiconductor structures having through-holes sealed with feed through metalization

摘要: The invention relates to a method for producing detector determining the energy of photons and charged particles; be precise, so-called ΔE or transmission detector. also that can produced by using said method. aim is provide aforementioned type stable over long period time in which dead zones are distinctly minimized. aims this type. To these ends, inventive used produce Si(Li) substrate having p+ layer an n layer. These layers according prior art. According method, partially removed, example, chemical etching, honing lapping. Lapping, particular, has proven effective. This reduces zone ineffective from treated manner. significantly minimized compared those art methods.