Phonon and Thermal Properties of Exfoliated Tantalum Diselenide Thin Films

摘要: We report on the phonon and thermal properties of thin films tantalum diselenide (2H-TaSe2) obtained via graphene-like mechanical exfoliation crystals grown by chemical vapor transport. The ratio intensities Raman peak from Si substrate E2g TaSe2 presents a convenient metric for quantifying film thickness. temperature coefficients two main peaks, A1g E2g, are -0.013 -0.0097 cm-1/oC, respectively. optothermal measurements indicate that room conductivity in these decreases its bulk value ~16 W/mK to ~9 45-nm thick films. measurement electrical resistivity field-effect devices with channels indicates heat conduction is dominated acoustic phonons van der Waals scaling thickness suggests scattering boundaries substantial despite sharp interfaces mechanically cleaved samples. These results important understanding exfoliated other metal dichalcogenides, as well evaluating self-heating effects made such materials.