作者: Kafil M. , Eric Dalto
DOI: 10.5772/13959
关键词:
摘要: Packaging of semiconductor electronic device is a challenge due to the progressive increase in power level operating devices which associated with increasing performance. As feature sizes continue be reduced, ensuring reliable operation has become growing challenge. The effective transfer heat from an integrated circuit (IC) and its spreader sink vital step meeting this ITRS projected density junction-to-ambient thermal resistance for high-performance chips at 14 nm generation are >100 Wcm-2 <0.2 °CW-1, respectively. main bottlenecks reducing resistances interface material (TIM) (Prasher 2006) sink. primary goal chapter review metallic-nanowire nanocomposites as compared other types materials. first section will different nanowire-polymer composites well carbon nanotube-polymer material. In recent years, nanotube (CNT) were proposed many publications possible TIM high conductivity low impedance. However, possibility inadvertently incorporating contaminating impurities, existence voids between CNTs, growth conditions CNT arrays greatly affect typically resulting large performance uncertainty. On hand, can where inclusion nanowires, should achieve conductivity. later sections describe research development ongoing area nanocomposites. fabrication routes nanowires characterizations discussed detail. applicability metallic evaluated.