Atomic layer deposition of B-doped ZnO using triisopropyl borate as the boron precursor and comparison with Al-doped ZnO

摘要: Doped ZnO films are an important class of transparent conductive oxides, with many applications demanding increased growth control and low deposition temperatures. Therefore, the preparation B-doped by atomic layer (ALD) at 150 °C was studied. The B source triisopropyl borate, B(OiPr)3 (TIB), which has a significantly lower vapour pressure is safer alternative precursor to highly toxic diborane(6), B2H6. doping fraction (DF) varied ratio dopant ALD cycles. electrical, structural optical properties ZnO:B were studied as function concentration temperature, compared ZnO:Al films, where dimethylaluminium isopropoxide, [Al(CH3)2(OiPr)]2 (DMAI) trimethylaluminium, Al2(CH3)6 (TMA) Al sources. A resistivity 3.5 mΩ cm achieved for 45 nm-thick deposited 0.016, similar results obtained prepared DMAI 8 TMA optimized DF 0.040. Hence TIB, well DMAI, outperformed conventionally employed in terms efficiency °C. It found that band gap could be easily tuned over range ∼3.2–3.7 eV modifying fraction.