Evidence for spin memory in the electron phase coherence in graphene
作者： A. A. Kozikov , D. W. Horsell , E. McCann , V. I. Fal'ko
DOI: 10.1103/PHYSREVB.86.045436
关键词:
摘要: We measure the dependence of conductivity graphene as a function magnetic field, temperature, and carrier density discover saturation dephasing length at low temperatures that we ascribe to spin memory effects. Values coherence up eight microns are found scale with mean free path. consider different origins this effect suggest it is controlled by resonant states act magneticlike defects. By varying level disorder, demonstrate can be tuned over an order magnitude.
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