Influences of Mg doping and N vacancy on the optoelectronic properties of GaN nanowires
作者： Si-Hao Xia , Lei Liu , Yike Kong , Yu Diao
DOI: 10.1007/S11082-016-0768-7
关键词:
摘要: For the optimization of p-type doping processing GaN nanowires, influences Mg and N vacancy on optoelectronic properties nanowires are researched basis first principles. The formation energy, work function, band structures, optical calculated discussed. Results show that ideal nanowire can be obtained through doing process. However, existence will weaken conductivity Mg-doped nanowires. vacancies urgently needed to avoided during process
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