Nonvolatile semiconductor memory device and IC memory card using same
作者： Hiromi Nobukata , Ihachi Naiki , Yoshitaka Osaka
DOI:
关键词:
摘要: A nonvolatile semiconductor memory device capable of improving a reliability spare region, the data region in accordance with method use, and realizing function an additional writing as multi-level memory, IC card using same, provided storing 4-level binary data; use decoders for supplying drive voltage to region; latch circuit transferring number levels be stored stopping supply sub decoder when transfer is normally completed; completed.
google.com.mx 参考文章(11)
M. Bauer, R. Alexis, G. Atwood, B. Baltar, A. Fazio, K. Frary, M. Hensel, M. Ishac, J. Javanifard, M. Landgraf, D. Leak, K. Loe, D. Mills, P. Ruby, R. Rozman, S. Sweha, S. Talreja, K. Wojciechowski, A multilevel-cell 32 Mb flash memory international solid-state circuits conference. pp. 132- 133 ,(1995) , 10.1109/ISSCC.1995.535462
Ravi Kumar Arimilli, Derek Edward Williams, Method and system for transferring data between buses having differing ordering policies ,(1997)
Shigetada Kobayashi, Makota c, o Canon K.K. Takaoka, Image interface device ,(1991)
Jong-wook Park, Kang-deog Suh, Multi-state non-volatile semiconductor memory and method for driving the same ,(1996)
Johnny Javanifard, Sanjay Talreja, Gregory Atwood, Mark E. Bauer, Kevin W. Frary, Albert Fazio, Sensing schemes for flash memory with multilevel cells ,(1995)
Mark E. Bauer, Sherif Sweha, Bit map addressing schemes for flash memory ,(1995)
Takashi Uchino, Akio Hagiwara, Nozomu Nambu, Non-volatile multi-state memory device with memory cell capable of storing multi-state data ,(1996)
Osamu Saito, Kouichi Gouhara, Kaoru Adachi, Kenji Ito, Integrated circuit memory card for write in/read out capability having plurality of latching means for expandable addressing using counting means for enabling latches thereof ,(1995)
Takashi Uchino, Akio Hagiwara, Nozomu Nambu, Non-volatile multi-state memory device capable with variable storing resolution ,(1996)