ZnSe and ZnO film growth by pulsed-laser deposition
作者： Y.R. Ryu , S. Zhu , S.W. Han , H.W. White , P.F. Miceli
DOI: 10.1016/S0169-4332(97)00681-8
关键词:
摘要: ZnSe and ZnO films have been deposited on (001) GaAs substrates under different pressures by pulsed-laser deposition (PLD) with a 193 nm laser beam. The ambient were changed from 8 X 10 -6 to 5 -2 Torr high-purity argon gas for oxygen ZnO. X-ray diffraction (XRD) measurement was performed these samples. FWHM's of theta-rocking curves the (004) peaks less than 0.5°. data show that high-quality can be also synthesized PLD.
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