Transport phenomena in vertical reactors for metalorganic vapor phase epitaxy

作者: Dimitrios I. Fotiadis , Shigekazu Kieda , Klavs F. Jensen

DOI: 10.1016/0022-0248(90)90403-8

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摘要: Abstract Effects of operating conditions, reactor geometry, and heat transfer characteristics on flow patterns growth rate uniformity in vertical, axisymmetric reactors for metalorganic vapor phase epitaxy (MOVPE) are described. Finite element solutions two- three-dimensional models transport phenomena vertical MOVPE identify regions inlet rates, susceptor rotations, pressures where recirculations due to natural convection minimized good deposition is achieved. Particular attention placed understanding the influence geometry fields film thickness variations. The numerical computations demonstrate that modifications orientation reactor, size its distance from as well shape enclosure can be used effectively optimize performance. Baffles also advantageously improve existing enclosures but at expense more complex patterns. simulations underscore importance including accurate treatments by illustrating different result commonly thermal boundary conditions a detailed model. model predictions shown agreement with experimentally observed fields, wall temperatures rates GaAs. Nonlinear lead existence multiple steady flows same parameters breaking axisymmetry development fully An example non-axisymmetric field given assumption discussed.

参考文章(30)
D. H. Reep, S. K. Ghandhi, Deposition of GaAs Epitaxial Layers by Organometallic CVD Temperature and Orientation Dependence Journal of The Electrochemical Society. ,vol. 130, pp. 675- 680 ,(1983) , 10.1149/1.2119780
C. Wayne Mastin, Joe F. Thompson, Z. U.A. Warsi, Numerical Grid Generation: Foundations and Applications ,(1985)
Carl Houtman, David B. Graves, Klavs F. Jensen, CVD in Stagnation Point Flow An Evaluation of the Classical 1D Treatment Journal of The Electrochemical Society. ,vol. 133, pp. 961- 970 ,(1986) , 10.1149/1.2108777
Hermann Schlichting, Boundary layer theory ,(1955)
Vincent T. Morgan, The Overall Convective Heat Transfer from Smooth Circular Cylinders Advances in heat transfer. ,vol. 11, pp. 199- 264 ,(1975) , 10.1016/S0065-2717(08)70075-3
Harry Moffat, Klavs F. Jensen, Complex flow phenomena in MOCVD reactors Journal of Crystal Growth. ,vol. 77, pp. 108- 119 ,(1986) , 10.1016/0022-0248(86)90290-3
Richard Pollard, John Newman, Silicon Deposition on a Rotating Disk Journal of The Electrochemical Society. ,vol. 127, pp. 744- 752 ,(1980) , 10.1149/1.2129743
S. Patnaik, R.A. Brown, C.A. Wang, Hydrodynamic dispersion in rotating-disk omvpe reactors: Numerical simulation and experimental measurements Journal of Crystal Growth. ,vol. 96, pp. 153- 174 ,(1989) , 10.1016/0022-0248(89)90285-6
Frank P. Incropera, David P. DeWitt, Introduction to Heat Transfer ,(1985)
Dimitrios I. Fotiadis, Martin Boekholt, Klavs F. Jensen, Wolfgang Richter, Flow and heat transfer in CVD reactors: Comparison of Raman temperature measurements and finite element model predictions Journal of Crystal Growth. ,vol. 100, pp. 577- 599 ,(1990) , 10.1016/0022-0248(90)90257-L