Polycrystalline ZnO thin films on Si (1 0 0) deposited by filtered cathodic vacuum arc
作者： X.L Xu , S.P Lau , J.S Chen , G.Y Chen , B.K Tay
DOI: 10.1016/S0022-0248(01)00611-X
关键词:
摘要: Abstract Polycrystalline ZnO thin films have been grown on Si (1 0 0) substrate using filtered cathodic vacuum arc technique. Room temperature photoluminescence reveals a strong near-band edge emission at 378 nm and weak green around 510 nm from the film deposited 230°C. The intensity ratio of to is about 100 indicating high quality film. An additional 420 nm, corresponding interstitial oxygen level, also observed 430°C. were characterized by X-ray diffraction, photoelectron spectroscopy, Raman as well transmittance measurement.
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