Electrical properties of zinc oxide sputtered thin films

摘要: Abstract ZnO thin films were deposited on silicon substrate by rf magnetron sputtering from metallic zinc target. The electrical properties of are currently being studied. In this work, measurements the ac conductivity sandwich structures with silver and platinum electrodes reported. frequency dependence both dielectric constant have been investigated in range 5 kHz–13 MHz. It is shown that total σ ( ω ), obeys equation )= Aω S where s an index which increases decreases temperature. appears for films, conduction mechanism thermally activated overlap large polaron tunnelling correlated barrier-hopping charge carrier over localized states fit experimental data. constant, e r , lies 8–9 at room temperature independent films.