Hot jet etching of GaAs and Si

摘要: This paper contains a description of new anisotropic dry etching technique (hot jet etching) which does not require ions or plasmas. The is obtained from directed flux chemically reactive species. species are by thermally decomposing comparatively unreactive feed gases in resistively heated tube. Using Cl2, CF3Br, SF6, Si and GaAs have been etched. Etch rates as high 5 μm min−1 with Cl2 samples. High differential etch obtained, since there no sputtering component to the etching. ratio depth undercutting distance approximately for gas Cl2. hot may make possible class chemical etchants.