作者: Heon-Min Lee , Kwang Sun Ji , Young-Ju Eo , Bum-Sung Kim , Don-Hee Lee
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摘要: It is very important that constitution of good hetero-junction interface with a high quality amorphous silicon thin films on cleaned c-Si wafer for making efficiency solar cells. For achieving the cells, inspection and management surface conditions are essential subjects. In this experiment, we analyzed sensitively using Spectroscopic Ellipsometer u-PCD effective carrier life time, so accomplished e value 43.02 at 4.25eV by optimizing cleaning process which representative well. We carried out deposition hydrogenated RF-PECVD systems having density low crystallinity results medium approximation modeling fitting spectroscopic ellipsometer. reached cell 12.67% 14.30% flat textured CZ each under AM1.5G irradiation, adopting optimized made. As result, confirmed ellipsometry useful analyzing methode cells need to multi layer structure.