Heteroepitaxial Growth of GaN on 6H‐SiC(0001) by Plasma‐Assisted Molecular Beam Epitaxy

摘要: We report on the correlation between growth conditions and defect densities, as well generation mechanism, for GaN directly deposited H-etched SiC(0001) by plasma-assisted molecular-beam epitaxy. 10 nm thin nucleation layers were at different (600 to 800 °C, Ga-lean Ga-rich). The island size increased from about 50 Ga-lean) 250 (800 Additionally, we examine epilayers nucleated under these but overgrown with 300 (720 Ga-stable). These samples clearly show atomic steps, however, they exhibit rather densities (10 11 cm -2 600 °C Ga-rich) determined plan-view transmission electron microscopy. Furthermore, performed growth-stop experiments using GaN-thicknesses ranging 2 2000 studying generation. It appears that coalescence is main source of threading dislocations.