Characterization of Silicon Carbide Whiskers
作者： Keith R. Karasek , Steven A. Bradley , Jeffry T. Donner , Harry C. Yeh , James L. Schienle
DOI: 10.1111/J.1151-2916.1989.TB05999.X
关键词:
摘要: This paper presents SiC whiskers from six manufacturers characterized by bulk chemical techniques, X- ray photoelectron spectroscopy, X-ray diffraction, and scanning transmission electron microscopy or microscopy. Major component (C, Si, O) surface chemistries of the fell into four general categories: high oxygen content with oxide resembling SiO{sub 2}, a Si-O- C glass, low Si-O-C hydrocarbon. Several exhibited significant impurities - in particular, Fe. From morphological viewpoint, differences diameter, debris level, straightness, types quantities defects were observed one manufacturer to another.
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