Pressure-induced hole doping of the Hg-based cuprate superconductors.
作者： Claudia Ambrosch-Draxl , E Ya Sherman , H Auer , T Thonhauser
DOI: 10.1103/PHYSREVLETT.92.187004
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摘要: We investigate the electronic structure and hole content in copper-oxygen planes of Hg-based high T x cuprates for one to four CuO 2 layers hydrostatic pressures up 15 GPa. find that with pressure-induced additional number holes order 0.05e density states at Fermi level changes by approximately a factor 2. At same time, saddle point is moved accompanied an enhanced k z dispersion. This finding explains pressure behavior c . leads conclusion applicability van Hove scenario restricted. By comparison experiment, we estimate coupling constant be 1, ruling out weak limit.
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