A spectroscopic investigation of novel doped glasses for active infrared devices

摘要: A number of novel doped glasses have been studied for their potential as infrared amplifier materials. Optical amplifiers which operate outside the C-band are likely to form part future optical telecoms systems. This work is focused on transition metal and rare earth-doped materials could provide gain in S-band.Nickel Vanadium-doped gallium lanthanum sulphide (GLS) were identified possible new Emission was observed at 1200nm from Ni-doped GLS 1400nm V-doped GLS. The FWHM emission 450 nm, making it particularly attractive a broadband amplifier. Low temperature spectra suggest that not affected by nonradiative decay same extent Cr-doped GLS.Thulium erbium-doped tin silicate glass-ceramics produced sol-gel method addition oxide these makes them photosensitive shown this increase fluorescence lifetimes. However, >5% SnO2 causes increased absorption would outweigh advantages gained lifetime. Thulium-doped investigated first time, show broad band 1470 nm with ~120 nm. maximum lifetime 3F4 level 37 µs, higher than Tm-doped silica.Y2O3-Al2O3-SiO2 (YAS) glass low phonon host thulium-doped fibre Raman FTIR measurements showed energy can be reduced increasing yttria:alumina ratio decreasing silica content. confirmed level, an 20% over range studied. YAS successfully drawn composition 17.4% Y2O3, 22.5% Al2O3 60% SiO2. 7.5 m continuous unclad fabricated diameter 150-350 µm 1150°C. minimum loss measured 3.6 dB/m 1360 material good use S-band amplification.