Effect of SiO2 substrate on the irradiation-assisted manipulation of supported graphene: a molecular dynamics study

摘要: The irradiation effects in graphene supported by SiO2 substrate including defect production and implantation efficiency are investigated using the molecular dynamics (MD) method with empirical potentials. We show that damage comes from two aspects: direct induced incident ions indirect resulting backscattered particles sputtered atoms substrate. In contrast suspended graphene, we find is dominant at high energies. As a result, enhanced observed when energy above 5 keV for Ar 3 keV Si. probability all energies, even total low always much lower than because of higher threshold displacement carbon atoms. addition, demonstrate striking finding it possible to dope considerable optimal Our results indicate an important factor process ion-irradiation-assisted engineering properties graphene.