Monolithic integration of InGaAsP-InP strained-layer distributed feedback laser and external modulator by selective quantum-well interdiffusion
作者： A. Ramdane , P. Krauz , E.V.K. Rao , A. Hamoudi , A. Ougazzaden
DOI: 10.1109/68.414687
关键词:
摘要: A new approach using a cap-annealing partial disordering technique is demonstrated for 1.55-/spl mu/m multiple-quantum-well (MQW) distributed feedback (DFB) laser-external electroabsorption modulator monolithic integration. Good static performances of the light source (15 mA threshold current, 14-dB on-off ratio 4-V voltage swing) are reported this that preserves material optical and electrical quality. >
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