The metal-insulator transition in n-type In0.53Ga0.47As

摘要: The authors present measurements of the low-temperature conductivity a series metallic n-type In0.53Ga0.47As samples, having kFl<3. kF is Fermi wavenumber and l elastic scattering length. data are extrapolated to zero temperature critical behaviour zero-temperature examined. dependence appears consistent with terms due electron-electron interactions weak localisation. However, detailed analysis utilising magnetoconductivity reveals discrepancies theory, it becomes clear that for these samples corrections localisation not independent additive. inelastic rate inferred from its found change one proportional T3/2 T as metal-insulator transition approach, in agreement theories Isawa Kaveh co-workers.