Resistive switching characteristics of a modified active electrode and Ti buffer layer in Cu Se-based atomic switch
作者： Hyunsuk Woo , Sujaya Kumar Vishwanath , Sanghun Jeon
DOI: 10.1016/J.JALLCOM.2018.04.179
关键词:
摘要: … active electrode with different Cu x Se 1−x composition ratios (0.01 < x < 0.45) and a titanium (Ti… The optimum composition was determined to be Cu 0.11 Se 0.89 /Ti (2.5 nm) for which …
sci-hub.se 参考文章(42)
Heeyoung Jeon, Jingyu Park, Woochool Jang, Hyunjung Kim, Hyoseok Song, Honggi Kim, Hyungtak Seo, Hyeongtag Jeon, Resistive switching behaviors of Cu/TaOx/TiN device with combined oxygen vacancy/copper conductive filaments Current Applied Physics. ,vol. 15, pp. 1005- 1009 ,(2015) , 10.1016/J.CAP.2015.06.002
A. Belmonte, U. Celano, R. Degraeve, A. Fantini, A. Redolfi, W. Vandervorst, M. Houssa, M. Jurczak, L. Goux, Operating-Current Dependence of the Cu-Mobility Requirements in Oxide-Based Conductive-Bridge RAM IEEE Electron Device Letters. ,vol. 36, pp. 775- 777 ,(2015) , 10.1109/LED.2015.2448759
Qi Liu, Shibing Long, Wei Wang, Qingyun Zuo, Sen Zhang, Junning Chen, Ming Liu, Improvement of Resistive Switching Properties in $ \hbox{ZrO}_{2}$ -Based ReRAM With Implanted Ti Ions IEEE Electron Device Letters. ,vol. 30, pp. 1335- 1337 ,(2009) , 10.1109/LED.2009.2032566
U. Celano, L. Goux, A. Belmonte, G. Giammaria, K. Opsomer, C. Detavernier, O. Richard, H. Bender, F. Irrera, M. Jurczak, W. Vandervorst, Progressive vs. abrupt reset behavior in conductive bridging devices: A C-AFM tomography study international electron devices meeting. pp. 351- 354 ,(2014) , 10.1109/IEDM.2014.7047048
T Tsuruoka, K Terabe, T Hasegawa, M Aono, Forming and switching mechanisms of a cation-migration-based oxide resistive memory Nanotechnology. ,vol. 21, pp. 425205- 425205 ,(2010) , 10.1088/0957-4484/21/42/425205
Seungjae Jung, Jaemin Kong, Sunghoon Song, Kwanghee Lee, Takhee Lee, Hyunsang Hwang, Sanghun Jeon, Flexible resistive random access memory using solution-processed TiOx with Al top electrode on Ag layer-inserted indium-zinc-tin-oxide-coated polyethersulfone substrate Applied Physics Letters. ,vol. 99, pp. 142110- ,(2011) , 10.1063/1.3621826
X. B. Yan, H. Hao, Y. F. Chen, Y. C. Li, W. Banerjee, Highly transparent bipolar resistive switching memory with In-Ga-Zn-O semiconducting electrode in In-Ga-Zn-O/Ga2O3/In-Ga-Zn-O structure Applied Physics Letters. ,vol. 105, pp. 093502- ,(2014) , 10.1063/1.4894521
Tsuyoshi Hasegawa, Kazuya Terabe, Tohru Tsuruoka, Masakazu Aono, Atomic Switch: Atom/Ion Movement Controlled Devices for Beyond Von‐Neumann Computers Advanced Materials. ,vol. 24, pp. 252- 267 ,(2012) , 10.1002/ADMA.201102597
Umberto Celano, Ludovic Goux, Karl Opsomer, Martina Iapichino, Attilio Belmonte, Alexys Franquet, Ilse Hoflijk, Christophe Detavernier, Malgorzata Jurczak, Wilfried Vandervorst, Scanning probe microscopy as a scalpel to probe filament formation in conductive bridging memory devices Microelectronic Engineering. ,vol. 120, pp. 67- 70 ,(2014) , 10.1016/J.MEE.2013.06.001
E C Demis, R Aguilera, H O Sillin, K Scharnhorst, E J Sandouk, M Aono, A Z Stieg, J K Gimzewski, Atomic switch networks?nanoarchitectonic design of a complex system for natural computing Nanotechnology. ,vol. 26, pp. 204003- ,(2015) , 10.1088/0957-4484/26/20/204003