Physics and electronics of the noble-metal/elemental-semiconductor interface formation: a status report
作者： G. Le Lay
DOI: 10.1016/0039-6028(83)90537-X
关键词:
摘要: Abstract The object of this report is to given a systematic overview the characteristics formation noble-metal/elemental-semiconductor interface. growth mechanisms, structural and energetic properties different phases, are described discussed in connection with electronic system. interaction these interfaces oxygen also analyzed. Besides individual behavior, general trends derived.
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