作者: J. Lossen , C. Schmiga , S.W. Glunz , M. Rauer , K. Meyer
DOI: 10.4229/25THEUPVSEC2010-2DO.2.5
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摘要: This work focuses on simplifying the fabrication process of our near-industrial n-type silicon solar cells with screen-printed aluminium-alloyed rear emitter. We investigate structural and electrical properties Al emitters alloyed differently prepared Si surfaces. demonstrate that formation a proper emitter neither requires planar nor non-diffused surface, thus allowing both-sided surface texturing phosphorous doping during n front field diffusion without need an additional protecting masking layer. On textured surfaces careful choice printing alloying conditions is essential to obtain Al-p shunts in form locally non-alloyed regions. By adjusting or by applying simple conditioning step, can be effectively prevented, thereby simultaneously increasing internal reflectance reducing saturation current density. P-diffused shown uncritical. In summary, we for p easily realised leading much more flexible cells.