Nanocomposite resists for electron beam nanolithography

摘要: Abstract A novel nanocomposite resist system was developed for sub-100 nm resolution e-beam lithography by dispersing surface-treated silica nanoparticles in a commercial ZEP520 ® resist. At 4.0 wt % loading of nanoparticles, the exhibited much higher than without sacrificing intrinsic high sensitivity and contrast starting polymer. The first major result is that 46 nm-wide isolated lines were obtained system, whereas comparatively 130 under same experimental conditions. Moreover, it shown addition resulted resistance to plasma etching with O 2 gas. improvement indicates promising candidate lithography.