作者: Dale W Collins , Rita J Klein
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摘要: Methods of electroless filling electrically different features such as contact openings to form interconnects and conductive contacts, semiconductor devices, dies, systems that incorporate the contacts are disclosed. The shorted together with a selective material, nucleation layer is selectively deposited onto area be plated (e.g., base opening), material fill opening. process achieves substantially simultaneous having surface potentials at an about even rate.