作者: Peter Kazlas , Jianna Wang , Paul S. Drzaic , Gregg Duthaler , Karl Amundson
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摘要: A process for forming a pattern in semiconductor film is provided. The comprises the steps of: providing substrate; an organic adjacent and destructive agent selected portions of film, changing property substantially through full thickness such that differs from remaining film. method manufacturing transistor gate electrode dielectric substrate electrode; source drain dielectric; mask electrode, portion remain exposed; layer comprising one plurality inorganic colloidal particles, mask, thereby transistor, having less than mask.