作者: Murugathas Thanihaichelvan , Selvadurai Loheeswaran , Kailasapathy Balashangar , Dhayalan Velauthapillai , Punniamoorthy Ravirajan
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摘要: In this work, chemical bath-deposited cadmium sulfide (CdS) thin films were employed as an alternative hole-blocking layer for inverted poly(3-hexylthiophene) (P3HT) and phenyl-C61-butyric acid methyl ester (PCBM) bulk heterojunction solar cells. CdS deposited by bath deposition their thicknesses successfully controlled tailoring the time. The influence of thickness on performance P3HT:PCBM cells was systematically studied. short circuit current densities power conversion efficiencies strongly increased until to ~70 nm. This attributed suppression interfacial charge recombination layer, which is consistent with lower dark found thickness. A further increase resulted in a density due strong absorption evidenced UV-Vis optical studies. Both fill factor open voltage less than ~50 nm comparatively lower, could be effect pin holes film, reduces series resistance increases recombination. Under AM 1.5 illumination (100 mW/cm²) conditions, optimized PCBM:P3HT 70 showed 50% efficiency enhancement, comparison similar dense TiO₂ 50 prepared spray pyrolysis.