Noise and ionization rate measurements in silicon photodiodes
作者： R.D. Baertsch
关键词:
摘要:
harvard.edu
sci-hub.se 参考文章(4)
H. Melchior, L.K. Anderson, Noise in high speed avalanche photodiodes international electron devices meeting. pp. 40- 40 ,(1965) , 10.1109/IEDM.1965.187579
C. A. Lee, R. A. Logan, R. L. Batdorf, J. J. Kleimack, W. Wiegmann, Ionization Rates of Holes and Electrons in Silicon Physical Review. ,vol. 134, pp. 761- 773 ,(1964) , 10.1103/PHYSREV.134.A761
R.J. McIntyre, Multiplication noise in uniform avalanche diodes IEEE Transactions on Electron Devices. ,vol. 13, pp. 164- 168 ,(1966) , 10.1109/T-ED.1966.15651
R.D. Baertsch, Low-frequency noise measurements in silicon avalanche photodiodes IEEE Transactions on Electron Devices. ,vol. 13, pp. 383- 385 ,(1966) , 10.1109/T-ED.1966.15698