Band alignment between (100) Si and amorphous LaAlO3, LaScO3, and Sc2O3: Atomically abrupt versus interlayer-containing interfaces
作者： V. V. Afanas’ev , A. Stesmans , L. F. Edge , D. G. Schlom , T. Heeg
DOI: 10.1063/1.2164432
关键词:
摘要: Incorporation of a ∼1-nm-thick SiOx interlayer is found to have little effect on the band alignment between (100) Si substrate and amorphous LaAlO3, LaScO2, Sc2O3 insulators. All these materials are give same offsets irrespective differences in their composition, even when contacting directly. This suggests that bulk electron states properties semiconductor insulator layer play much more important role determining lineup at interface than any dipoles related particular bonding configurations encountered transition region oxides.
core.ac.uk
scitation.org
harvard.edu
aip.org
sci-hub.se 参考文章(13)
G. Seguini, E. Bonera, S. Spiga, G. Scarel, M. Fanciulli, Energy-band diagram of metal/Lu2O3/silicon structures Applied Physics Letters. ,vol. 85, pp. 5316- 5318 ,(2004) , 10.1063/1.1828600
V. V. Afanas’ev, M. Houssa, A. Stesmans, M. M. Heyns, Band alignments in metal–oxide–silicon structures with atomic-layer deposited Al2O3 and ZrO2 Journal of Applied Physics. ,vol. 91, pp. 3079- 3084 ,(2002) , 10.1063/1.1436299
V. V. Afanas’ev, M. Houssa, A. Stesmans, M. M. Heyns, Electron energy barriers between (100)Si and ultrathin stacks of SiO2, Al2O3, and ZrO2 insulators Applied Physics Letters. ,vol. 78, pp. 3073- 3075 ,(2001) , 10.1063/1.1366366
C. Zhao, T. Witters, B. Brijs, H. Bender, O. Richard, M. Caymax, T. Heeg, J. Schubert, V. V. Afanas’ev, A. Stesmans, D. G. Schlom, Ternary rare-earth metal oxide high-k layers on silicon oxide Applied Physics Letters. ,vol. 86, pp. 132903- ,(2005) , 10.1063/1.1886249
Z. Xu, A. Daga, Haydn Chen, Microstructure and optical properties of scandium oxide thin films prepared by metalorganic chemical-vapor deposition Applied Physics Letters. ,vol. 79, pp. 3782- 3784 ,(2001) , 10.1063/1.1424072
H Ofner, M G Ramsey, F P Netzer, J A D Matthew, F N Yousif, The localization of unoccupied 3d states in oxidized Sc Journal of Physics: Condensed Matter. ,vol. 6, pp. 3453- 3458 ,(1994) , 10.1088/0953-8984/6/18/022
L. F. Edge, D. G. Schlom, R. T. Brewer, Y. J. Chabal, J. R. Williams, S. A. Chambers, C. Hinkle, G. Lucovsky, Y. Yang, S. Stemmer, M. Copel, B. Holländer, J. Schubert, Suppression of Subcutaneous Oxidation during the Deposition of Amorphous Lanthanum Aluminate on Silicon Applied Physics Letters. ,vol. 84, pp. 4629- 4631 ,(2004) , 10.1063/1.1759065
M. L. Bortz, R. H. French, Optical reflectivity measurements using a laser plasma light source Applied Physics Letters. ,vol. 55, pp. 1955- 1957 ,(1989) , 10.1063/1.102335
V. V. Afanas’ev, A. Stesmans, C. Zhao, M. Caymax, T. Heeg, J. Schubert, Y. Jia, D. G. Schlom, G. Lucovsky, Band alignment between (100)Si and complex rare earth∕transition metal oxides Applied Physics Letters. ,vol. 85, pp. 5917- 5919 ,(2004) , 10.1063/1.1829781
P Sivasubramani, MJ Kim, BE Gnade, RM Wallace, LF Edge, DG Schlom, HS Craft, J-P Maria, None, Outdiffusion of la and Al from amorphous LaAlO3 in direct contact with Si (001) Applied Physics Letters. ,vol. 86, pp. 201901- ,(2005) , 10.1063/1.1928316