Use of high-K dielectric material in modified ONO structure for semiconductor devices
作者： Robert B. Ogle , Nicholas H. Tripsas , Arvind Halliyal , Mark T. Ramsbey , Kuo-Tung Chang
DOI:
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摘要: A process for fabrication of a semiconductor device including modified ONO structure, forming the structure by providing substrate; first oxide layer on depositing comprising high-K dielectric material layer; and top material. The may be, e.g., MIRRORBIT™ two-bit EEPROM or floating gate flash structure.
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